NSN - 5961-00-106-3698, 5961001063698 of Semiconductor Device Thyristor

Aviation Axis stocks X13T520, RELEASE6210, JHP133-836, D13T1, 83904 - Semiconductor Device Thyristor made by General Electric Inc, Electronic Industries Inc, Hollingsworth John R Co, Hazletine Corp, Pakon Inc with 5961-00-106-3698. Owned and operated by ASAP Semiconductor, we have access to over 2 billion new and after-market parts applicable within the aerospace and defense industries. All our parts are shipped using our premier shipping and supply chain. We offer short lead-times and some of the fastest shipping times in the industry. We are well-equipped to handle any customer situation - including AOG. Submit an RFQ today and expect a response within 15 minutes or less. ASAP - the evolution of purchasing.

Part No Manufacturer Item Name QTY RFQ
X13T520 general electric inc semiconductor device thyristor Avl RFQ
RELEASE6210 electronic industries inc semiconductor device thyristor Avl RFQ
JHP133-836 hollingsworth john r co semiconductor device thyristor Avl RFQ
D13T1 general electric inc semiconductor device thyristor Avl RFQ
D13T1 hazletine corp semiconductor device thyristor Avl RFQ
83904 pakon inc semiconductor device thyristor Avl RFQ
826027-001 evans enterprises inc semiconductor device thyristor Avl RFQ
8210-1209 iet labs inc semiconductor device thyristor Avl RFQ
8210-1209 genrad inc semiconductor device thyristor Avl RFQ
62-798200 cpi international inc semiconductor device thyristor Avl RFQ
62-798200 communications and power industries semiconductor device thyristor Avl RFQ
4834-268110 fluke electronics corp semiconductor device thyristor Avl RFQ
417-4-01808 british aerospace inc semiconductor device thyristor Avl RFQ
417-4-01808 selex es limited semiconductor device thyristor Avl RFQ
386-7304P1 raytheon technical services company semiconductor device thyristor Avl RFQ
386-7304P1 raytheon company semiconductor device thyristor Avl RFQ
361-0006 cummins power generation inc semiconductor device thyristor Avl RFQ
352-0900-010 rockwell collins inc semiconductor device thyristor Avl RFQ
2N6027PBFREE central semiconductor corp semiconductor device thyristor Avl RFQ
2N6027A adelco elektronik gmbh semiconductor device thyristor Avl RFQ
2N6027 D13T1 general electric inc semiconductor device thyristor Avl RFQ
2N6027 semiconductor components industries semiconductor device thyristor Avl RFQ
2N6027 newark corporation semiconductor device thyristor Avl RFQ
2N6027 lacon electronic gmbh semiconductor device thyristor Avl RFQ
2N6027 adelco elektronik gmbh semiconductor device thyristor Avl RFQ
2N6027 electronic industries inc semiconductor device thyristor Avl RFQ
2N6027 edo corporation semiconductor device thyristor Avl RFQ
2N6027 general electric inc semiconductor device thyristor Avl RFQ
2N6027 freescale semiconductor semiconductor device thyristor Avl RFQ
268110 fluke electronics corp semiconductor device thyristor Avl RFQ
1855-0314 hewlett packard co semiconductor device thyristor Avl RFQ
1855-0314 avago technologies us inc semiconductor device thyristor Avl RFQ
184-193-1 automatic switch company semiconductor device thyristor Avl RFQ
184-193-1 asco services inc semiconductor device thyristor Avl RFQ
151-0508-00 spacelabs hillsboro operations semiconductor device thyristor Avl RFQ
125C310 federal signal corp semiconductor device thyristor Avl RFQ
1-015-1157 dotronix inc semiconductor device thyristor Avl RFQ
007003600 kustom electronics inc semiconductor device thyristor Avl RFQ
007-0137-00 honeywell aerospace semiconductor device thyristor Avl RFQ
007-00137-0000 honeywell aerospace semiconductor device thyristor Avl RFQ

Technical Characteristics of NSN 5961001063698

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALPLASTIC
ABHPOVERALL LENGTH0.225 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
ABJTTERMINAL LENGTH0.500 INCHES MINIMUM
ADAVOVERALL DIAMETER0.195 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
ALASINTERNAL CONFIGURATIONUNIJUNCTION
ALBAELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASEANODE
AXGYMOUNTING METHODTERMINAL
CBBLFEATURES PROVIDEDHERMETICALLY SEALED CASE
CTMZIII SEMICONDUCTOR MATERIALSILICON
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC1.5 MAXIMUM ON VOLTAGE, FORWARD VOLTAGE DROP, DC AND 1.5 MAXIMUM ON-STATE VOLTAGE, DC
CTQXCURRENT RATING PER CHARACTERISTIC5.00 MICROAMPERES SOURCE CUTOFF CURRENT PASCAL AND 50.00 MILLIAMPERES FORWARD CURRENT, TOTAL RMS NANOAMPERES AND 2.00 AMPERES FORWARD CURRENT, TOTAL RMS TORR
FEATSPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNPN
TTQYTERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
ZZZKSPECIFICATION/STANDARD DATA80131-RELEASE6210 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION

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