NSN - 5961-00-850-8449, 5961008508449 of Semiconductor Device Diode
Aviation Axis stocks VBE890-1N1124A, TM22, TM21, RELEASE3616, L291651-19 - Semiconductor Device Diode made by Thales Nederland, Gilbert Engineering, Electronic Industries Inc, Bendix Corporation, International Rectifier Corporation with 5961-00-850-8449. Owned and operated by ASAP Semiconductor, we have access to over 2 billion new and after-market parts applicable within the aerospace and defense industries. All our parts are shipped using our premier shipping and supply chain. We offer short lead-times and some of the fastest shipping times in the industry. We are well-equipped to handle any customer situation - including AOG. Submit an RFQ today and expect a response within 15 minutes or less. ASAP - the evolution of purchasing.
| Alternative NSN: 5961-00-850-8449 |
| Item Name: Semiconductor Device Diode |
| Federal Supply Class (FSC): 5961 Semiconductor Devices And Associated Hardware |
| NIIN: 008508449 |
| NCB Code: USA (00) |
| Manufacturers: Adelco Elektronik Gmbh, Bendix Corporation, Dynalec Corporation, Eca Etablissement, Electronic Industries Inc, Fairchild Corp, Freescale Semiconductor, General Electric Co, General Electric Inc, Gilbert Engineering, Gould Instrument Systems Inc, Inspektorat Wsparcia Sil Zbrojnych, International Rectifier Corporation, Joint Electron Device Engineering, Kollsman Inc, Picatinny Arsenal, Raytheon Company, Rockwell Collins Inc, Tellurometer Usa Div Of Plessey Inc, Texas Instruments Inc, Thales Communications, Thales Nederland, Ward Leonard Electric Company Inc, Westinghouse Electric Corp |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| VBE890-1N1124A | thales nederland | semiconductor device diode | Avl | RFQ |
| TM22 | gilbert engineering | semiconductor device diode | Avl | RFQ |
| TM21 | gilbert engineering | semiconductor device diode | Avl | RFQ |
| RELEASE3616 | electronic industries inc | semiconductor device diode | Avl | RFQ |
| L291651-19 | bendix corporation | semiconductor device diode | Avl | RFQ |
| JAN1N253 | international rectifier corporation | semiconductor device diode | Avl | RFQ |
| JAN1N1124AA | adelco elektronik gmbh | semiconductor device diode | Avl | RFQ |
| JAN-1N254 | general electric co | semiconductor device diode | Avl | RFQ |
| J94-0141 | ward leonard electric company inc | semiconductor device diode | Avl | RFQ |
| 928D118H01 | westinghouse electric corp | semiconductor device diode | Avl | RFQ |
| 8813569 | picatinny arsenal | semiconductor device diode | Avl | RFQ |
| 704005-104 | kollsman inc | semiconductor device diode | Avl | RFQ |
| 60090-139 | dynalec corporation | semiconductor device diode | Avl | RFQ |
| 5961PL0801776 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | Avl | RFQ |
| 5961008289184 | eca etablissement | semiconductor device diode | Avl | RFQ |
| 4178600-33 | raytheon company | semiconductor device diode | Avl | RFQ |
| 3DT1 | international rectifier corporation | semiconductor device diode | Avl | RFQ |
| 353-1996-000 | rockwell collins inc | semiconductor device diode | Avl | RFQ |
| 352250009969 | thales nederland | semiconductor device diode | Avl | RFQ |
| 232-1151P1 | raytheon company | semiconductor device diode | Avl | RFQ |
| 20673461 | thales communications | semiconductor device diode | Avl | RFQ |
| 1N608 | international rectifier corporation | semiconductor device diode | Avl | RFQ |
| 1N253 | freescale semiconductor | semiconductor device diode | Avl | RFQ |
| 1N2027TM24 | gilbert engineering | semiconductor device diode | Avl | RFQ |
| 1N1576 | electronic industries inc | semiconductor device diode | Avl | RFQ |
| 1N1124A | international rectifier corporation | semiconductor device diode | Avl | RFQ |
| 1N1124 | raytheon company | semiconductor device diode | Avl | RFQ |
| 1N1124 | texas instruments inc | semiconductor device diode | Avl | RFQ |
| 1N1116 | general electric inc | semiconductor device diode | Avl | RFQ |
| 1N1115 | joint electron device engineering | semiconductor device diode | Avl | RFQ |
| 1M253 | electronic industries inc | semiconductor device diode | Avl | RFQ |
| 16101-001 | dynalec corporation | semiconductor device diode | Avl | RFQ |
| 15175 | fairchild corp | semiconductor device diode | Avl | RFQ |
| 129066 | gould instrument systems inc | semiconductor device diode | Avl | RFQ |
| 12-0094 | tellurometer usa div of plessey inc | semiconductor device diode | Avl | RFQ |
Technical Characteristics of NSN 5961008508449
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.405 INCHES MAXIMUM |
| AKPV | MOUNTING FACILITY QUANTITY | 1 |
| AXGY | MOUNTING METHOD | THREADED STUD |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CQJX | NOMINAL THREAD SIZE | 0.190 INCHES |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS CASE |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
| THSD | THREAD SERIES DESIGNATOR | UNF |
| TTQY | TERMINAL TYPE AND QUANTITY | 1 TAB, SOLDER LUG AND 1 THREADED STUD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/104 GOVERNMENT SPECIFICATION |
| CCDG | OVERALL WIDTH ACROSS FLATS | 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 250.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 200.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 AMPERES SOURCE CUTOFF CURRENT PRESET AND 1.00 AMPERES FORWARD CURRENT, TOTAL RMS MEGAHERTZ |
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