NSN - 5961-00-052-2730, 5961000522730 of Semiconductor Device Diode
Aviation Axis stocks 1N4135, RELEASE4376 - Semiconductor Device Diode made by Electronic Industries Inc, Telcom Semiconductor Inc, Semiconductor Devices Inc, On Semiconductor Corporation, N A P Smd Technology Inc with 5961-00-052-2730. Owned and operated by ASAP Semiconductor, we have access to over 2 billion new and after-market parts applicable within the aerospace and defense industries. All our parts are shipped using our premier shipping and supply chain. We offer short lead-times and some of the fastest shipping times in the industry. We are well-equipped to handle any customer situation - including AOG. Submit an RFQ today and expect a response within 15 minutes or less. ASAP - the evolution of purchasing.
Alternative NSN: 5961-00-052-2730 |
Item Name: Semiconductor Device Diode |
Federal Supply Class (FSC): 5961 Semiconductor Devices And Associated Hardware |
NIIN: 000522730 |
NCB Code: USA (00) |
Manufacturers: Electronic Industries Inc, Freescale Semiconductor, Gilbert Engineering, International Diode Corp, Microsemi Corporation, N A P Smd Technology Inc, On Semiconductor Corporation, Semiconductor Devices Inc, Telcom Semiconductor Inc |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
1N4135 | electronic industries inc | semiconductor device diode | Avl | RFQ |
1N4135 | telcom semiconductor inc | semiconductor device diode | Avl | RFQ |
1N4135 | semiconductor devices inc | semiconductor device diode | Avl | RFQ |
1N4135 | on semiconductor corporation | semiconductor device diode | Avl | RFQ |
1N4135 | n a p smd technology inc | semiconductor device diode | Avl | RFQ |
1N4135 | microsemi corporation | semiconductor device diode | Avl | RFQ |
1N4135 | international diode corp | semiconductor device diode | Avl | RFQ |
1N4135 | gilbert engineering | semiconductor device diode | Avl | RFQ |
1N4135 | freescale semiconductor | semiconductor device diode | Avl | RFQ |
RELEASE4376 | electronic industries inc | semiconductor device diode | Avl | RFQ |
Technical Characteristics of NSN 5961000522730
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | GLASS |
ABHP | OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-7 |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM NOMINAL REGULATOR VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 0.25 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE4376 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
Related NSN List for 5961-00-052-2730, 5961000522730
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