NSN - 5961-00-325-5697, 5961003255697 of Transistor
Aviation Axis stocks 2N5356, EGS319, RELEASE5791 - Transistor made by Martin Marietta Corp, General Electric Inc, Electronic Industries Inc, British Sarozal Ltd, Bae Systems Information And Electronic Systems Integration I Div Microwave Elect with 5961-00-325-5697. Owned and operated by ASAP Semiconductor, we have access to over 2 billion new and after-market parts applicable within the aerospace and defense industries. All our parts are shipped using our premier shipping and supply chain. We offer short lead-times and some of the fastest shipping times in the industry. We are well-equipped to handle any customer situation - including AOG. Submit an RFQ today and expect a response within 15 minutes or less. ASAP - the evolution of purchasing.
Alternative NSN: 5961-00-325-5697 |
Item Name: Transistor |
Federal Supply Class (FSC): 5961 Semiconductor Devices And Associated Hardware |
NIIN: 003255697 |
NCB Code: USA (00) |
Manufacturers: Bae Systems Information And Electronic Systems Integration I Div Microwave Elect, British Sarozal Ltd, Electronic Industries Inc, General Electric Inc, Martin Marietta Corp, Meggitt New Hampshire Inc, Solid State Devices Inc |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
2N5356 | martin marietta corp | transistor | Avl | RFQ |
2N5356 | general electric inc | transistor | Avl | RFQ |
2N5356 | electronic industries inc | transistor | Avl | RFQ |
2N5356 | british sarozal ltd | transistor | Avl | RFQ |
2N5356 | bae systems information and electronic systems integration i div microwave elect | transistor | Avl | RFQ |
2N5356 | solid state devices inc | transistor | Avl | RFQ |
EGS319 | meggitt new hampshire inc | transistor | Avl | RFQ |
RELEASE5791 | electronic industries inc | transistor | Avl | RFQ |
Technical Characteristics of NSN 5961003255697
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | PLASTIC |
ABHP | OVERALL LENGTH | 0.265 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.205 INCHES MAXIMUM |
ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
AXGY | MOUNTING METHOD | TERMINAL |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
CTQX | CURRENT RATING PER CHARACTERISTIC | 500.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM |
CTRD | POWER RATING PER CHARACTERISTIC | 360.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM |
FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
Related NSN List for 5961-00-325-5697, 5961003255697
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