NSN - 5961-00-650-9638, 5961006509638 of Semiconductor Device Diode

Aviation Axis stocks 100122, 10133114, 1N5416, 353-3734-010, 353-6558-020 - Semiconductor Device Diode made by National Micronetics Inc, Paeaeesikunta, Semtech Corporation, Rockwell Collins Inc, Elettronica Gmbh with 5961-00-650-9638. Owned and operated by ASAP Semiconductor, we have access to over 2 billion new and after-market parts applicable within the aerospace and defense industries. All our parts are shipped using our premier shipping and supply chain. We offer short lead-times and some of the fastest shipping times in the industry. We are well-equipped to handle any customer situation - including AOG. Submit an RFQ today and expect a response within 15 minutes or less. ASAP - the evolution of purchasing.

Part No Manufacturer Item Name QTY RFQ
100122 national micronetics inc semiconductor device diode Avl RFQ
10133114 paeaeesikunta semiconductor device diode Avl RFQ
1N5416 semtech corporation semiconductor device diode Avl RFQ
353-3734-010 rockwell collins inc semiconductor device diode Avl RFQ
353-6558-020 rockwell collins inc semiconductor device diode Avl RFQ
353-9019-170 rockwell collins inc semiconductor device diode Avl RFQ
524-140-091 elettronica gmbh semiconductor device diode Avl RFQ
99099366 thales systemes aeroportes sa semiconductor device diode Avl RFQ
99099366 thales aerospace semiconductor device diode Avl RFQ
99099635 thales systemes aeroportes sa semiconductor device diode Avl RFQ
99099635 thales aerospace semiconductor device diode Avl RFQ
AG0820400 rohde and schwarz gmbh semiconductor device diode Avl RFQ
B84794 mbda uk ltd semiconductor device diode Avl RFQ
JANTX1N5416A adelco elektronik gmbh semiconductor device diode Avl RFQ

Technical Characteristics of NSN 5961006509638

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALGLASS
ABHPOVERALL LENGTH0.130 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
ABJTTERMINAL LENGTH0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
ADAVOVERALL DIAMETER0.110 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
AXGYMOUNTING METHODTERMINAL
CBBLFEATURES PROVIDEDHERMETICALLY SEALED CASE
CTMZSEMICONDUCTOR MATERIALSILICON
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
CTQXCURRENT RATING PER CHARACTERISTIC80.00 AMPERES FORWARD CURRENT, AVERAGE PASCAL
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 DEG CELSIUS JUNCTION
TESTTEST DATA DOCUMENT81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI
TTQYTERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD
ZZZKSPECIFICATION/STANDARD DATA81349-MIL-S-19500/411 GOVERNMENT SPECIFICATION

Related NSN List for 5961-00-650-9638, 5961006509638

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