NSN - 5961-00-853-1065, 5961008531065 of Semiconductor Device Diode
Aviation Axis stocks 02-012-111, 113365, 1489691-0001, 1M18Z5, 1N3026 - Semiconductor Device Diode made by Motorola Ltd, Fluke Electronics Corp, Honeywell International Inc, General Dynamics Corporation, Freescale Semiconductor with 5961-00-853-1065. Owned and operated by ASAP Semiconductor, we have access to over 2 billion new and after-market parts applicable within the aerospace and defense industries. All our parts are shipped using our premier shipping and supply chain. We offer short lead-times and some of the fastest shipping times in the industry. We are well-equipped to handle any customer situation - including AOG. Submit an RFQ today and expect a response within 15 minutes or less. ASAP - the evolution of purchasing.
| Alternative NSN: 5961-00-853-1065 |
| Item Name: Semiconductor Device Diode |
| Federal Supply Class (FSC): 5961 Semiconductor Devices And Associated Hardware |
| NIIN: 008531065 |
| NCB Code: USA (00) |
| Manufacturers: Adelco Elektronik Gmbh, American Telephone And Telegraph Co, Cummins Power Generation Inc, Dare Electronics Inc, E C A Etablissement Central, Electronic Industries Inc, Elettronica Gmbh, Fluke Electronics Corp, Freescale Semiconductor, General Dynamics Corporation, General Electric Inc, Hollingsworth John R Co, Honeywell International Inc, Inspektorat Wsparcia Sil Zbrojnych, International Rectifier Corporation, Micro Uspd Inc, Motorola Ltd, Qes Ltd Quality Electronic, Raytheon Company, Raytheon Systems Ltd, Rockwell Collins Inc, Thales Usa Inc |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 02-012-111 | motorola ltd | semiconductor device diode | Avl | RFQ |
| 113365 | fluke electronics corp | semiconductor device diode | Avl | RFQ |
| 1489691-0001 | honeywell international inc | semiconductor device diode | Avl | RFQ |
| 1M18Z5 | general dynamics corporation | semiconductor device diode | Avl | RFQ |
| 1M18Z5 | freescale semiconductor | semiconductor device diode | Avl | RFQ |
| 1N3026 | freescale semiconductor | semiconductor device diode | Avl | RFQ |
| 1N3026A | freescale semiconductor | semiconductor device diode | Avl | RFQ |
| 1N3026B | electronic industries inc | semiconductor device diode | Avl | RFQ |
| 1N3026B | motorola ltd | semiconductor device diode | Avl | RFQ |
| 20-00903-025 | raytheon systems ltd | semiconductor device diode | Avl | RFQ |
| 231051042 | dare electronics inc | semiconductor device diode | Avl | RFQ |
| 353-3131-000 | rockwell collins inc | semiconductor device diode | Avl | RFQ |
| 357180A | qes ltd quality electronic | semiconductor device diode | Avl | RFQ |
| 359-0030 | cummins power generation inc | semiconductor device diode | Avl | RFQ |
| 4178600-114 | raytheon company | semiconductor device diode | Avl | RFQ |
| 521-034-031 | elettronica gmbh | semiconductor device diode | Avl | RFQ |
| 5961008531065 | e c a etablissement central | semiconductor device diode | Avl | RFQ |
| 5961PL0800977 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | Avl | RFQ |
| 69-4978 | international rectifier corporation | semiconductor device diode | Avl | RFQ |
| 848142-0181 | thales usa inc | semiconductor device diode | Avl | RFQ |
| JAN1N3026BA | adelco elektronik gmbh | semiconductor device diode | Avl | RFQ |
| JHP111-130 | hollingsworth john r co | semiconductor device diode | Avl | RFQ |
| KS19923L19 | american telephone and telegraph co | semiconductor device diode | Avl | RFQ |
| Z4XL18B | general electric inc | semiconductor device diode | Avl | RFQ |
| ZB18B | micro uspd inc | semiconductor device diode | Avl | RFQ |
Technical Characteristics of NSN 5961008531065
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.195 INCHES MINIMUM AND 0.350 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 18.0 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 14.00 MILLIAMPERES REPETITIVE PEAK FORWARD CURRENT MINIMUM |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/115 GOVERNMENT SPECIFICATION |
Related NSN List for 5961-00-853-1065, 5961008531065
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