NSN - 5961-01-203-4101, 5961012034101 of Semiconductor Device Diode
Aviation Axis stocks 1N4148, 1N4148 (JANHCA - Semiconductor Device Diode made by Microsemi Corp, Chip Supply Inc with 5961-01-203-4101. Owned and operated by ASAP Semiconductor, we have access to over 2 billion new and after-market parts applicable within the aerospace and defense industries. All our parts are shipped using our premier shipping and supply chain. We offer short lead-times and some of the fastest shipping times in the industry. We are well-equipped to handle any customer situation - including AOG. Submit an RFQ today and expect a response within 15 minutes or less. ASAP - the evolution of purchasing.
Alternative NSN: 5961-01-203-4101 |
Item Name: Semiconductor Device Diode |
Federal Supply Class (FSC): 5961 Semiconductor Devices And Associated Hardware |
NIIN: 012034101 |
NCB Code: USA (01) |
Manufacturers: Chip Supply Inc, Microsemi Corp |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
1N4148 | microsemi corp | semiconductor device diode | Avl | RFQ |
1N4148 (JANHCA | chip supply inc | semiconductor device diode | Avl | RFQ |
Technical Characteristics of NSN 5961012034101
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 2.140 INCHES MINIMUM AND 3.180 INCHES MAXIMUM |
AGAV | III END ITEM IDENTIFICATION | B-1B |
ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | ANODE |
AYQS | TERMINAL CIRCLE DIAMETER | 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM |
CBBL | FEATURES PROVIDED | GOLD PLATED LEADS |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC |
CTQX | CURRENT RATING PER CHARACTERISTIC | 200.0 AMPERES MAXIMUM AVERAGE GATE POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | -65.0 DEG CELSIUS AMBIENT AIR AND 175.00 DEG CELSIUS AMBIENT AIR |
CXCY | III PART NAME ASSIGNED BY CONTROLLING AGENCY | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING |
FEAT | SPECIAL FEATURES | METALLIZATION: TOP (ANODE) ALUMINUM, BACK (CATHODE) GOLD, AL THICKNESS: 25,000(A) MINIMUM, GOLD THICKNESS: 4,000(A) MINIMUM, CHIP THICKNESS: .010 ,+ OR - .002 |
PMLC | III PRECIOUS MATERIAL AND LOCATION | BACK (CATHODE) GOLD |
PRMT | III PRECIOUS MATERIAL | GOLD |
Related NSN List for 5961-01-203-4101, 5961012034101
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