NSN - 5961-01-351-8135, 5961013518135 of Semiconductor Device Diode
Aviation Axis stocks 1503100005-00, 503100005, 64802-003, WZ-065 - Semiconductor Device Diode made by Graphtec America Inc, New Japan Radio with 5961-01-351-8135. Owned and operated by ASAP Semiconductor, we have access to over 2 billion new and after-market parts applicable within the aerospace and defense industries. All our parts are shipped using our premier shipping and supply chain. We offer short lead-times and some of the fastest shipping times in the industry. We are well-equipped to handle any customer situation - including AOG. Submit an RFQ today and expect a response within 15 minutes or less. ASAP - the evolution of purchasing.
Alternative NSN: 5961-01-351-8135 |
Item Name: Semiconductor Device Diode |
Federal Supply Class (FSC): 5961 Semiconductor Devices And Associated Hardware |
NIIN: 013518135 |
NCB Code: USA (01) |
Manufacturers: Graphtec America Inc, New Japan Radio |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
1503100005-00 | graphtec america inc | semiconductor device diode | Avl | RFQ |
503100005 | graphtec america inc | semiconductor device diode | Avl | RFQ |
64802-003 | graphtec america inc | semiconductor device diode | Avl | RFQ |
WZ-065 | new japan radio | semiconductor device diode | Avl | RFQ |
Technical Characteristics of NSN 5961013518135
MRC | Criteria | Characteristic |
---|---|---|
AFZC | FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.5 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER |
CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0/+5.0 |
CTRD | POWER RATING PER CHARACTERISTIC | 0.5 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
Related NSN List for 5961-01-351-8135, 5961013518135
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