NSN - 5962-01-155-5679, 5962011555679 of Microcircuit Memory

Aviation Axis stocks 507624-255, 53S841, 82S185F, B2672, CC5145 - Microcircuit Memory made by Edo Corporation, Mmi Amd, Philips Semiconductors Inc, Intersil Corporation, Rockwell Collins Inc with 5962-01-155-5679. Owned and operated by ASAP Semiconductor, we have access to over 2 billion new and after-market parts applicable within the aerospace and defense industries. All our parts are shipped using our premier shipping and supply chain. We offer short lead-times and some of the fastest shipping times in the industry. We are well-equipped to handle any customer situation - including AOG. Submit an RFQ today and expect a response within 15 minutes or less. ASAP - the evolution of purchasing.

Alternative NSN: 5962-01-155-5679
Item Name: Microcircuit Memory
Federal Supply Class (FSC): 5962 Microcircuits Electronic
NIIN: 011555679
NCB Code: USA (01)
Manufacturers: Dla Land And Maritime, Edo Corporation, Intersil Corporation, Mmi Amd, Philips Semiconductors Inc, Rockwell Collins Inc
Part No Manufacturer Item Name QTY RFQ
507624-255 edo corporation microcircuit memory Avl RFQ
53S841 mmi amd microcircuit memory Avl RFQ
82S185F philips semiconductors inc microcircuit memory Avl RFQ
B2672 intersil corporation microcircuit memory Avl RFQ
CC5145 philips semiconductors inc microcircuit memory Avl RFQ
HM1-7685-8 intersil corporation microcircuit memory Avl RFQ
PC73618-1 rockwell collins inc microcircuit memory Avl RFQ
ROM PROM HEAD 007 dla land and maritime microcircuit memory Avl RFQ
S82S185I philips semiconductors inc microcircuit memory Avl RFQ
SSM1215 mmi amd microcircuit memory Avl RFQ

Technical Characteristics of NSN 5962011555679

MRCCriteriaCharacteristic
ADAQBODY LENGTH0.960 INCHES MAXIMUM
ADATBODY WIDTH0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
ADAUBODY HEIGHT0.185 INCHES MAXIMUM
AEHXMAXIMUM POWER DISSIPATION RATING715.0 MILLIWATTS
AFGAOPERATING TEMP RANGE-55.0/+125.0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-65.0/+150.0 DEG CELSIUS
CBBLFEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND W/ENABLE AND SCHOTTKY AND PROGRAMMABLE AND BIPOLAR
CQSJINCLOSURE MATERIALCERAMIC
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CQWXOUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
CQZPINPUT CIRCUIT PATTERN12 INPUT
CTFTCASE OUTLINE SOURCE AND DESIGNATORD-6 MIL-M-38510
CWSGTERMINAL SURFACE TREATMENTSOLDER
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC5.5 VOLTS MAXIMUM POWER SOURCE
CZEQTIME RATING PER CHACTERISTIC125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
CZERMEMORY DEVICE TYPEROM
CZZZMEMORY CAPACITYUNKNOWN
TESTTEST DATA DOCUMENT81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI
TTQYTERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT
ZZZKSPECIFICATION/STANDARD DATA81349-MIL-M-38510/209 GOVERNMENT SPECIFICATION

Related NSN List for 5962-01-155-5679, 5962011555679

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