NSN - 5962-01-272-7304, 5962012727304 of Microcircuit Memory
Aviation Axis stocks 6011800-001, CY7C17155DMB, IDT71681SA70DB - Microcircuit Memory made by Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems, Cypress Semiconductor Corporation, Integrated Device Technology Inc with 5962-01-272-7304. Owned and operated by ASAP Semiconductor, we have access to over 2 billion new and after-market parts applicable within the aerospace and defense industries. All our parts are shipped using our premier shipping and supply chain. We offer short lead-times and some of the fastest shipping times in the industry. We are well-equipped to handle any customer situation - including AOG. Submit an RFQ today and expect a response within 15 minutes or less. ASAP - the evolution of purchasing.
Alternative NSN: 5962-01-272-7304 |
Item Name: Microcircuit Memory |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 012727304 |
NCB Code: USA (01) |
Manufacturers: Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems, Cypress Semiconductor Corporation, Integrated Device Technology Inc |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
6011800-001 | bae systems information and electronic systems integration inc div bae systems | microcircuit memory | Avl | RFQ |
CY7C17155DMB | cypress semiconductor corporation | microcircuit memory | Avl | RFQ |
IDT71681SA70DB | integrated device technology inc | microcircuit memory | Avl | RFQ |
Technical Characteristics of NSN 5962012727304
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 200 INCHES NOMINAL |
MEMORY | ADAT | BODY WIDTH0 295 INCHES NOMINAL |
MEMORY | ADAU | BODY HEIGHT0 120 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDED3-STATE OUTPUT AND HIGH PERFORMANCE AND HIGH SPEED AND HIGH RELIABILITY |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN18 INPUT |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC70 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 70 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
Related NSN List for 5962-01-272-7304, 5962012727304
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