NSN - 5962-01-296-1080, 5962012961080 of Microcircuit Memory

Aviation Axis stocks 12839 10055 ITEM 56, 28896-1255-811, 8512040-465, AT28C64B-25DM 883, DM28C65 250 B - Microcircuit Memory made by Ferranti International Plc, Ferranti Technologies Ltd, Honeywell Aerospace, Atmel Corporation, Seeq Technology Inc with 5962-01-296-1080. Owned and operated by ASAP Semiconductor, we have access to over 2 billion new and after-market parts applicable within the aerospace and defense industries. All our parts are shipped using our premier shipping and supply chain. We offer short lead-times and some of the fastest shipping times in the industry. We are well-equipped to handle any customer situation - including AOG. Submit an RFQ today and expect a response within 15 minutes or less. ASAP - the evolution of purchasing.

Alternative NSN: 5962-01-296-1080
Item Name: Microcircuit Memory
Federal Supply Class (FSC): 5962 Microcircuits Electronic
NIIN: 012961080
NCB Code: USA (01)
Manufacturers: Atmel Corporation, Ferranti International Plc, Ferranti Technologies Ltd, Honeywell Aerospace, Seeq Technology Inc
Part No Manufacturer Item Name QTY RFQ
12839 10055 ITEM 56 ferranti international plc microcircuit memory Avl RFQ
12839 10055 ITEM 56 ferranti technologies ltd microcircuit memory Avl RFQ
28896-1255-811 ferranti technologies ltd microcircuit memory Avl RFQ
28896-1255-811 ferranti international plc microcircuit memory Avl RFQ
8512040-465 honeywell aerospace microcircuit memory Avl RFQ
AT28C64B-25DM 883 atmel corporation microcircuit memory Avl RFQ
DM28C65 250 B seeq technology inc microcircuit memory Avl RFQ

Technical Characteristics of NSN 5962012961080

MRCCriteriaCharacteristic
ADAQBODY LENGTH1.490 INCHES MAXIMUM
ADATBODY WIDTH0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
ADAUBODY HEIGHT0.165 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
AEHXMAXIMUM POWER DISSIPATION RATING500.0 MILLIWATTS
AFGAOPERATING TEMP RANGE-55.0/+125.0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-65.0/+150.0 DEG CELSIUS
CBBLFEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND ERASABLE AND ELECTROSTATIC SENSITIVE
CQSJINCLOSURE MATERIALCERAMIC
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
CQZPINPUT CIRCUIT PATTERN24 INPUT
CTFTCASE OUTLINE SOURCE AND DESIGNATORD-10 MIL-M-38510
CWSGTERMINAL SURFACE TREATMENTSOLDER
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC7.0 VOLTS MAXIMUM POWER SOURCE
CZEQTIME RATING PER CHACTERISTIC250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
CZERMEMORY DEVICE TYPEROM
CZZZMEMORY CAPACITYUNKNOWN
TESTTEST DATA DOCUMENT96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
TTQYTERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT

Related NSN List for 5962-01-296-1080, 5962012961080

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