NSN - 5962-01-359-0333, 5962013590333 of Microcircuit Memory
Aviation Axis stocks 330517-001, CY7C161A-25DBM, CY7C161A-45DMB, P4C1981-25CMB, P4C1981-25CMB M0296 - Microcircuit Memory made by Bae Systems Information And Electronic Systems Integration I, Cypress Semiconductor Corporation, Pyramid Semiconductor Corp, Performance Semiconductor Corp with 5962-01-359-0333. Owned and operated by ASAP Semiconductor, we have access to over 2 billion new and after-market parts applicable within the aerospace and defense industries. All our parts are shipped using our premier shipping and supply chain. We offer short lead-times and some of the fastest shipping times in the industry. We are well-equipped to handle any customer situation - including AOG. Submit an RFQ today and expect a response within 15 minutes or less. ASAP - the evolution of purchasing.
Alternative NSN: 5962-01-359-0333 |
Item Name: Microcircuit Memory |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 013590333 |
NCB Code: USA (01) |
Manufacturers: Bae Systems Information And Electronic Systems Integration I, Cypress Semiconductor Corporation, Performance Semiconductor Corp, Pyramid Semiconductor Corp |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
330517-001 | bae systems information and electronic systems integration i | microcircuit memory | Avl | RFQ |
CY7C161A-25DBM | cypress semiconductor corporation | microcircuit memory | Avl | RFQ |
CY7C161A-45DMB | cypress semiconductor corporation | microcircuit memory | Avl | RFQ |
P4C1981-25CMB | pyramid semiconductor corp | microcircuit memory | Avl | RFQ |
P4C1981-25CMB M0296 | pyramid semiconductor corp | microcircuit memory | Avl | RFQ |
P4C1981-25DMB | performance semiconductor corp | microcircuit memory | Avl | RFQ |
Technical Characteristics of NSN 5962013590333
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | CBBL | FEATURES PROVIDEDBURN IN AND ELECTROSTATIC SENSITIVE AND BIDIRECTIONAL AND PROGRAMMED AND MONOLITHIC |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING385 0 MILLIWATTS |
MEMORY | CQZP | INPUT CIRCUIT PATTERN21 INPUT |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT |
Related NSN List for 5962-01-359-0333, 5962013590333
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