NSN - 5962-01-372-1262, 5962013721262 of Microcircuit Memory

Aviation Axis stocks 15-1326285-1, 5962-8866203NA, NH15-1326285-1 - Microcircuit Memory made by Gte Products Corp, General Dynamics C4 Systems Inc, Cypress Semiconductor Corporation, Dla Land And Maritime with 5962-01-372-1262. Owned and operated by ASAP Semiconductor, we have access to over 2 billion new and after-market parts applicable within the aerospace and defense industries. All our parts are shipped using our premier shipping and supply chain. We offer short lead-times and some of the fastest shipping times in the industry. We are well-equipped to handle any customer situation - including AOG. Submit an RFQ today and expect a response within 15 minutes or less. ASAP - the evolution of purchasing.

Alternative NSN: 5962-01-372-1262
Item Name: Microcircuit Memory
Federal Supply Class (FSC): 5962 Microcircuits Electronic
NIIN: 013721262
NCB Code: USA (01)
Manufacturers: Cypress Semiconductor Corporation, Dla Land And Maritime, General Dynamics C4 Systems Inc, Gte Products Corp
Part No Manufacturer Item Name QTY RFQ
15-1326285-1 gte products corp microcircuit memory Avl RFQ
15-1326285-1 general dynamics c4 systems inc microcircuit memory Avl RFQ
5962-8866203NA cypress semiconductor corporation microcircuit memory Avl RFQ
NH15-1326285-1 dla land and maritime microcircuit memory Avl RFQ

Technical Characteristics of NSN 5962013721262

MRCCriteriaCharacteristic
AEHXMAXIMUM POWER DISSIPATION RATING1.0 WATTS
AFGAOPERATING TEMP RANGE-55.0/+125.0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-65.0/+150.0 DEG CELSIUS
AGAVEND ITEM IDENTIFICATIONHAC/RMPE REAC E/I FSCM 11293
CQSJINCLOSURE MATERIALCERAMIC
CQSZINCLOSURE CONFIGURATIONLEADED CHIP CARRIER
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
CRTLCRITICALITY CODE JUSTIFICATIONFEAT
CXCYPART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUIT,SRAM,32K X 8(CY7C197)
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC-0.5 VOLTS MINIMUM INPUT AND 6.0 VOLTS MAXIMUM INPUT
CZEQTIME RATING PER CHACTERISTIC55.00 NANOSECONDS NOMINAL ACCESS
CZERMEMORY DEVICE TYPERAM
CZESHYBRID TECHNOLOGY TYPEMONOLITHIC
CZZZMEMORY CAPACITY128KX8
NHCFNUCLEAR HARDNESS CRITICAL FEATUREHARDENED
TESTTEST DATA DOCUMENT81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI
TTQYTERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT
ZZZKSPECIFICATION/STANDARD DATA67268-5962-8866203UA GOVERNMENT STANDARD
ZZZXDEPARTURE FROM CITED DESIGNATORMODIFIED FOR NUCLEAR HARDNESS IMPACT
CTFTCASE OUTLINE SOURCE AND DESIGNATORC-11 MIL-M-38510
CBBLFEATURES PROVIDEDRADIATION HARDENED AND ELECTROSTATIC SENSITIVE
CWSGTERMINAL SURFACE TREATMENTSOLDER
FEATSPECIAL FEATURESCBBL
ZZZPPURCHASE DESCRIPTION IDENTIFICATION11293-15-1326285-1

Related NSN List for 5962-01-372-1262, 5962013721262

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