Buy 486-2244-0040 Bae Systems Land And Armaments L P Part with NSN 5962-01-307-2587
| Part Number: 486-2244-0040 | Alternate P/N: 48622440040 | Manufacturer: Bae Systems Land And Armaments L P | NSN: 5962-01-307-2587 (5962013072587) | NIIN: 013072587 | Item Name : Microcircuit Memory | CAGE Code: 44114 | FSC: 5962 Microcircuits Electronic |
Part number 486-2244-0040 under NSN 5962013072587 and FSC 5962 Microcircuits Electronic is now available in our ready-to-ship-inventory. This part is a Microcircuit Memory manufactured by Bae Systems Land And Armaments L P under CAGE Code 44114. To receive a quick quote for this part number, fill out the form
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NSN Information for Part Number 486-2244-0040 with NSN 5962-01-307-2587, 5962013072587
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-307-2587 Item Description: Microcircuit Memory | 5962 | 013072587 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 486-2244-0040 | 5 | 1 | C | A |
CHARACTERISTICS DATA of NSN 5962-01-307-2587, 5962013072587
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND WCLOCK |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
| MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING650 0 MILLIWATTS |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZER | MEMORY DEVICE TYPEPAL |
| MEMORY | ADAQ | BODY LENGTH1 280 INCHES MAXIMUM |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | ABKW | OVERALL HEIGHT0 325 INCHES MINIMUM AND 0 400 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN22 INPUT |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-9 MIL-M-38510 |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC55 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 55 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
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