Buy PLDC20RA10-35DMB Cypress Semiconductor Corporation Part with NSN 5962-01-373-5795
| Part Number: PLDC20RA10-35DMB | Alternate P/N: PLDC20RA1035DMB | Manufacturer: Cypress Semiconductor Corporation | NSN: 5962-01-373-5795 (5962013735795) | NIIN: 013735795 | Item Name : Microcircuit Memory | CAGE Code: 65786 | FSC: 5962 Microcircuits Electronic |
Part number PLDC20RA10-35DMB under NSN 5962013735795 and FSC 5962 Microcircuits Electronic is now available in our ready-to-ship-inventory. This part is a Microcircuit Memory manufactured by Cypress Semiconductor Corporation under CAGE Code 65786. To receive a quick quote for this part number, fill out the form
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NSN Information for Part Number PLDC20RA10-35DMB with NSN 5962-01-373-5795, 5962013735795
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-373-5795 Item Description: Microcircuit Memory | 5962 | 013735795 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Pldc20ra10-35dmb | 5 | 1 | 5 |
CHARACTERISTICS DATA of NSN 5962-01-373-5795, 5962013735795
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | F16AIRCOMBFIT E/I FSCM 81755 |
| CBBL | FEATURES PROVIDED | ASYNCHRONOUS AND MONOLITHIC AND PROGRAMMABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 20 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-9 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | -16.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE NOT APPLICABLE |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,MEMORY,DIGITAL,CMOS,ONE TIME PROGRAMMABLE,ASYNCHRONOUS,PALD,MONOLITHIC SILICON |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM APPLIED AND 7.0 VOLTS MAXIMUM APPLIED |
| CZEQ | TIME RATING PER CHACTERISTIC | 35.00 NANOSECONDS NOMINAL ACCESS |
| CZER | MEMORY DEVICE TYPE | PAL |
| CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC |
| FEAT | SPECIAL FEATURES | ONE TIME ASYNCHRONOUS PROGRAMMABLE |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 67268-5962-90555 GOVERNMENT STANDARD |
| ZZZT | NONDEFINITIVE SPEC/STD DATA | 01 TYPE AND L CASE AND A FINISH |
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