Buy AM8155DI Micro Power Systems Inc Part with NSN 5962-01-188-7173

Part Number: AM8155DI Manufacturer:  Micro Power Systems Inc NSN:  5962-01-188-7173 (5962011887173) NIIN:  011887173 Item Name : Microcircuit Memory CAGE Code:  54186 FSC:  5962 Microcircuits Electronic

Part number AM8155DI under NSN 5962011887173 and FSC 5962 Microcircuits Electronic is now available in our ready-to-ship-inventory. This part is a Microcircuit Memory manufactured by Micro Power Systems Inc under CAGE Code 54186. To receive a quick quote for this part number, fill out the form

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Aviation Axis is one of the leading suppliers of NSN part AM8155DI from Micro Power Systems Inc and other long-lead time aviation parts in the US. Owned and operated by ASAP Semiconductor, an AS9120B, ISO 9001:2015, and FAA AC 0056B accredited company, we stock over 10 million unique NSNs from 26 distinct federally classified categories. With more than 2 billion parts sourced from over 5,000 manufacturers globally, we have one of the largest inventories of ready-to-ship parts. And because we offer same-day and next-day delivery, we’re perfect for meeting all your complex Aircraft on Ground (AOG) requirements.

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NSN Information for Part Number AM8155DI with NSN 5962-01-188-7173, 5962011887173

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-188-7173

Item Description:

Microcircuit Memory

59620118871730NB
CIICHCCESDPMICCriticalityENAC
UBA0
Part NumberISCRNVCRNCCHCCMSDSSADC
Am8155di38E

CHARACTERISTICS DATA of NSN 5962-01-188-7173, 5962011887173

MRCCriteriaCharacteristic
MEMORYADAQBODY LENGTH50 2 MILLIMETERS MINIMUM AND 51 3 MILLIMETERS MAXIMUM
MEMORYADATBODY WIDTH14 8 MILLIMETERS MINIMUM AND 15 6 MILLIMETERS MAXIMUM
MEMORYADAUBODY HEIGHT2 0 MILLIMETERS MINIMUM AND 2 6 MILLIMETERS MAXIMUM
MEMORYAEHXMAXIMUM POWER DISSIPATION RATING1 5 WATTS
MEMORYAFGAOPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORYAFJQSTORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORYAGAVEND ITEM IDENTIFICATION5820-01-145-4902 MODEMCABLE DRI
MEMORYCBBLFEATURES PROVIDEDBURN IN MIL-STD-883 CLASS B AND HERMETICALLY SEALED AND MONOLITHIC AND STATIC OPERATION AND ELECTROSTATIC SENSITIVE
MEMORYCQSJINCLOSURE MATERIALCERAMIC
MEMORYCQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORYCQWXOUTPUT LOGIC FORMMETAL OXIDE-SEMICONDUCTOR LOGIC
MEMORYCQZPINPUT CIRCUIT PATTERN37 INPUT
MEMORYCRHLBIT QUANTITY2048
MEMORYCSWJWORD QUANTITY256
MEMORYCWSGTERMINAL SURFACE TREATMENTSOLDER
MEMORYCZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC5 0 VOLTS NOMINAL POWER SOURCE
MEMORYCZEQTIME RATING PER CHACTERISTIC400 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 400 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORYCZERMEMORY DEVICE TYPERAM
MEMORYTTQYTERMINAL TYPE AND QUANTITY40 PRINTED CIRCUIT

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