Buy XC18V01SO20C Xilinx Inc Part with NSN 5962-01-536-6487
| Part Number: XC18V01SO20C | Manufacturer: Xilinx Inc | NSN: 5962-01-536-6487 (5962015366487) | NIIN: 015366487 | Item Name : Microcircuit Memory | CAGE Code: 68994 | FSC: 5962 Microcircuits Electronic |
Part number XC18V01SO20C under NSN 5962015366487 and FSC 5962 Microcircuits Electronic is now available in our ready-to-ship-inventory. This part is a Microcircuit Memory manufactured by Xilinx Inc under CAGE Code 68994. To receive a quick quote for this part number, fill out the form
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NSN Information for Part Number XC18V01SO20C with NSN 5962-01-536-6487, 5962015366487
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-536-6487 Item Description: Microcircuit Memory | 5962 | 015366487 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | A | 0 | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Xc18v01so20c | 5 | 2 | 3 |
CHARACTERISTICS DATA of NSN 5962-01-536-6487, 5962015366487
| MRC | Criteria | Characteristic |
|---|---|---|
| CZEP | Capitance Rating Per Characteristic | 8.00 INPUT PICOFARADS MAXIMUM AND 14.00 OUTPUT PICOFARADS MAXIMUM |
| CTQX | Current Rating Per Characteristic | 25.00 MILLIAMPERES REVERSE CURRENT, DC ABSOLUTE AND 10.00 MILLIAMPERES REVERSE CURRENT, DC BLANK |
| FEAT | Special Features | DATA RETENTION 20 YRS 20000 PROGRAM/ERASE CYCLES |
| CBBL | Features Provided | ELECTROSTATIC SENSITIVE AND CASCADABLE AND ELECTRICALLY ALTERABLE |
| AFGA | Operating Temp Range | -40.0/+85.0 DEG CELSIUS |
| ADAT | Body Width | 0.292 INCHES MINIMUM AND 0.296 INCHES MAXIMUM |
| CQSJ | Inclosure Material | PLASTIC |
| ADAQ | Body Length | 0.500 INCHES MINIMUM AND 0.505 INCHES MAXIMUM |
| CXCY | Part Name Assigned By Controlling Agency | IC,3.3V SERIAL FPROM XC18V SERIES |
| ADAU | Body Height | 0.088 INCHES MINIMUM AND 0.096 INCHES MAXIMUM |
| TTQY | Terminal Type And Quantity | 20 GULLWING |
| AGAV | End Item Identification | KG-75A ULTRA FASTLANE |
| MRC | Decoded Requirement | Clear Text Reply |
| CQSZ | Inclosure Configuration | DUAL-IN-LINE |
| CZER | Memory Device Type | EEPROM |
| AFJQ | Storage Temp Range | -65.0/+150.0 DEG CELSIUS |
| CQWX | Output Logic Form | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CRTL | Criticality Code Justification | AGAV |
| CZZZ | Memory Capacity | 1 M |
| CZEN | Voltage Rating And Type Per Characteristic | -0.5 VOLTS MAXIMUM POWER SOURCE AND 4.0 VOLTS MAXIMUM POWER SOURCE AND -0.5 VOLTS MAXIMUM INPUT AND 5.5 VOLTS MAXIMUM INPUT |
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