NSN - 5962-01-099-6383, 5962010996383 of Microcircuit Memory

Aviation Axis stocks 21008-05, DM54S573J 883B, HM1-7643-8, MM5353 1D 883B, MM5353D 883B - Microcircuit Memory made by Mmi Amd, L3 Communications Corp, Intersil Corporation, Philips Semiconductors Inc, National Semiconductor Corp with 5962-01-099-6383. Owned and operated by ASAP Semiconductor, we have access to over 2 billion new and after-market parts applicable within the aerospace and defense industries. All our parts are shipped using our premier shipping and supply chain. We offer short lead-times and some of the fastest shipping times in the industry. We are well-equipped to handle any customer situation - including AOG. Submit an RFQ today and expect a response within 15 minutes or less. ASAP - the evolution of purchasing.

Alternative NSN: 5962-01-099-6383
Item Name: Microcircuit Memory
Federal Supply Class (FSC): 5962 Microcircuits Electronic
NIIN: 010996383
NCB Code: USA (01)
Manufacturers: Intersil Corporation, L3 Communications Corp, Mmi Amd, National Semiconductor Corp, Philips Semiconductors Inc
Part No Manufacturer Item Name QTY RFQ
21008-05 mmi amd microcircuit memory Avl RFQ
21008-05 l3 communications corp microcircuit memory Avl RFQ
21008-05 intersil corporation microcircuit memory Avl RFQ
21008-05 philips semiconductors inc microcircuit memory Avl RFQ
21008-05 national semiconductor corp microcircuit memory Avl RFQ
DM54S573J 883B national semiconductor corp microcircuit memory Avl RFQ
HM1-7643-8 intersil corporation microcircuit memory Avl RFQ
MM5353 1D 883B mmi amd microcircuit memory Avl RFQ
MM5353D 883B mmi amd microcircuit memory Avl RFQ
S82S137F 883B philips semiconductors inc microcircuit memory Avl RFQ
S82S137I 883B philips semiconductors inc microcircuit memory Avl RFQ

Technical Characteristics of NSN 5962010996383

MRCCriteriaCharacteristic
ADAQBODY LENGTH0.882 INCHES MINIMUM AND 0.925 INCHES MAXIMUM
ADATBODY WIDTH0.310 INCHES MAXIMUM
ADAUBODY HEIGHT0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
AFGAOPERATING TEMP RANGE-55.0/+125.0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-65.0/+150.0 DEG CELSIUS
CBBLFEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND W/OPEN COLLECTOR AND 3-STATE OUTPUT
CQSJINCLOSURE MATERIALCERAMIC AND GLASS
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CQWXOUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
CQZPINPUT CIRCUIT PATTERN12 INPUT
CWSGTERMINAL SURFACE TREATMENTSOLDER
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC5.5 VOLTS MAXIMUM POWER SOURCE
CZEQTIME RATING PER CHACTERISTIC40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
CZERMEMORY DEVICE TYPEROM
TESTTEST DATA DOCUMENT11627-21008 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWIN
TTQYTERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT

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