NSN - 5962-01-123-5447, 5962011235447 of Microcircuit Memory
Aviation Axis stocks 1009, 17918, 82S123, 932000, 93263-505B - Microcircuit Memory made by Mmi Amd, Philips Semiconductors Inc, Raytheon Company, Advanced Micro Devices Inc, Intersil Corporation with 5962-01-123-5447. Owned and operated by ASAP Semiconductor, we have access to over 2 billion new and after-market parts applicable within the aerospace and defense industries. All our parts are shipped using our premier shipping and supply chain. We offer short lead-times and some of the fastest shipping times in the industry. We are well-equipped to handle any customer situation - including AOG. Submit an RFQ today and expect a response within 15 minutes or less. ASAP - the evolution of purchasing.
| Alternative NSN: 5962-01-123-5447 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011235447 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc, Dla Land And Maritime, Intersil Corporation, Mmi Amd, Philips Semiconductors Inc, Raytheon Company, Texas Instruments Inc |
Technical Characteristics of NSN 5962011235447
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 440 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 248 INCHES MINIMUM AND 0 325 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 045 INCHES MINIMUM AND 0 085 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING910 0 MILLIWATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | AGAV | END ITEM IDENTIFICATIONF-15 RADAR FSCM 76301 |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIPOLAR AND WENABLE AND PROGRAMMABLE AND WINHIBIT |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONFLAT PACK |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN6 INPUT |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-1 5 VOLTS MINIMUM POWER SOURCE AND 5 5 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC40 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 84 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
| MEMORY | TEST | TEST DATA DOCUMENT82577-932821 DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 FLAT LEADS |
Related NSN List for 5962-01-123-5447, 5962011235447
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