NSN - 5962-01-135-8482, 5962011358482 of Microcircuit Memory

Aviation Axis stocks 24634-0317, 351-8872-032, 3594615-1, 3596467-1, 50004161 - Microcircuit Memory made by Bae Systems Information And Electronic Systems Integration Inc, Rockwell Collins Inc, Honeywell International Inc, Bureau De Gestion Otan Hawk, Advanced Micro Devices Inc with 5962-01-135-8482. Owned and operated by ASAP Semiconductor, we have access to over 2 billion new and after-market parts applicable within the aerospace and defense industries. All our parts are shipped using our premier shipping and supply chain. We offer short lead-times and some of the fastest shipping times in the industry. We are well-equipped to handle any customer situation - including AOG. Submit an RFQ today and expect a response within 15 minutes or less. ASAP - the evolution of purchasing.

Part No Manufacturer Item Name QTY RFQ
24634-0317 bae systems information and electronic systems integration inc microcircuit memory Avl RFQ
351-8872-032 rockwell collins inc microcircuit memory Avl RFQ
3594615-1 honeywell international inc microcircuit memory Avl RFQ
3596467-1 honeywell international inc microcircuit memory Avl RFQ
50004161 bureau de gestion otan hawk microcircuit memory Avl RFQ
AM2732DLB advanced micro devices inc microcircuit memory Avl RFQ
MD2732 B intel corp microcircuit memory Avl RFQ
MD2732A-45 intel corp microcircuit memory Avl RFQ
SC5962 0565 1 drs icas llc microcircuit memory Avl RFQ

Technical Characteristics of NSN 5962011358482

MRCCriteriaCharacteristic
MEMORYADAQBODY LENGTH1 235 INCHES MINIMUM AND 1 285 INCHES MAXIMUM
MEMORYADATBODY WIDTH0 515 INCHES MINIMUM AND 0 600 INCHES MAXIMUM
MEMORYADAUBODY HEIGHT0 205 INCHES MAXIMUM
MEMORYAFGAOPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORYAFJQSTORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORYAGAVEND ITEM IDENTIFICATIONA-10 13499
MEMORYCBBLFEATURES PROVIDEDELECTROSTATIC SENSITIVE AND BURN IN MIL-STD-883 CLASS B AND HERMETICALLY SEALED AND WENABLE AND ULTRAVIOLET ERASABLE AND 3-STATE OUTPUT
MEMORYCQSJINCLOSURE MATERIALCERAMIC
MEMORYCQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORYCQWXOUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORYCQZPINPUT CIRCUIT PATTERN14 INPUT
MEMORYCWSGTERMINAL SURFACE TREATMENTSOLDER
MEMORYCZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC6 0 VOLTS MAXIMUM POWER SOURCE
MEMORYCZERMEMORY DEVICE TYPERAM
MEMORYCZZZMEMORY CAPACITYUNKNOWN
MEMORYTESTTEST DATA DOCUMENT13499-351-8872 DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRA
MEMORYTTQYTERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT

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